Three-dimensional DIBL for shallow-trench isolated MOSFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 139-144

  Wang, Chih Hsin ^a,b   Zhang, Peng Fei ^c  

^a IEEE   (United States)

^b Rockwell Semiconductor Systems   (United States)

^c Information Storgae Device   (United States)

Author keywords

3 D DIBL; DIBL; LOCOS; Shallow trench; STI

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRODES; ELECTROSTATICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDATION; SEMICONDUCTING SILICON;

LOCAL OXIDATION OF SILICON (LOCOS); SHALLOW TRENCH ISOLATION (STI);

MOSFET DEVICES;

EID: 0032740716     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737452     Document Type: Article

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