Noise degradation induced by 7 Rays on P- And N-channel junction field-effect transistors

IEEE Transactions on Nuclear Science

Volumn 46, Issue 5, 1999, Pages 1294-1299

  Manfredi, P F ^a   Ratti, L ^a   Re, V ^a   Speziali, V ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Front end electronics; JFET; Noise; Radiation tolerance

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; RADIATION DETECTORS; SPECTRUM ANALYSIS; THERMAL NOISE;

FRONT END ELECTRONICS; RADIATION DETECTOR PREAMPLIFIERS; RADIATION TOLERANCE;

GAMMA RAYS;

EID: 0033207144     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.795806     Document Type: Article

References (27)

1. V. Radeka, S. Rescia, P. F. Manfred!, and V. Speziali, "Monolithic, radiation hard charge sensitive preamplifier using diffused N-channel junction field effect transistors," IEEE Trans. Nucl. Sci., vol. 38, p. 83, Apr. 1991.
2. W. Buttler, M. Citterio, G. Lutz, P. F. Manfredi, V. Re, and V. Speziali, "A monolithic radiation-tolerant charge-sensitive preamplifier," Nucl. Instrum. Methods Phys. Res., vol. A292, p. 435, 1990.
3. P. F. Manfredi and V. Speziali, "Effects of ionizing radiation on the noise properties of electron devices and monolithic circuits," Radiât. Phys. Chem., vol. 37, no. 4, p. 623, 1991.
4. V. Radeka, S. Rescia, P. F. Manfredi, V. Speziali, and F. Svelto, "JFET monolithic preamplifier with outstanding noise behavior and radiation hardness characteristics," IEEE Trans. Nucl. Sci., vol. 40, p. 744, Aug. 1993.
5. C. T. Sah, "Theory of low-frequency generation noise in junction fieldeffect transistors," Proc. IEEE, vol. 52, p. 795, 1964.
6. K. Kandiah, M. O. Deighton, and F. B. Whiting, "A physical model for random telegraph signal currents in semiconductor devices," J. Appl. Phys., vol. 66, no. 2, pp. 937-948, 1989.
7. P. F. Manfredi, "New perspectives in low noise preamplifier design for room temperature detector applications," in Proc. Materials Research Soc. Symp., vol. 302, pp. 213-223, 1993.
8. E. Panel, graduation paper, 1997, University of Pavia.
9. F. Faccio et al., "Total dose and single event effects in a 0.25 //m CMOS technology," in Proc. 4th Workshop on Electronics for LHC Experiments, Rome, Italy, Sept. 1998, p. 105.
10. F. Svelto, University of Bergamo, private communication.
11. L. Adams et al, "Study of the radiation tolerance of IC's for LHC," 2nd RD49 Status Rep., CERN/LHCC 99-8, Mar. 8, 1999.
12. P. F. Manfred! and V. Speziali, "The state-of-the-art of low noise electronics in particle physics," Nucl. Phys. B (Proc. Suppl. 32), p. 487, 1993.
13. G. Cesura and V. Re, "Effects of 7-rays and neutrons on the noise behavior of monolithic JFET circuits," IEEE Trans. Nucl. Sci., vol. 41, p. 577, June 1994.
14. G. Cesura, V. Re, and A. Tomasini, "Radiation sensitivity of noise in monolithic JFET circuits exposed to 60Co 7-rays," Nucl. Phys. B (Proc. Suppl. 32), p. 546, 1993.
15. M. Citterio étal, "A study of low noise JFET's exposed to large doses of gamma rays and neutrons," in Conf. Rec. IEEE Nuclear Science Symp., Orlando, FL, vol. 2, p. 794-796, 1992.
16. "Radiation effects on Si-JFET devices for front-end electronics," IEEE Trans. Nucl. Sci., vol. 43, pp. 1576-1584, June 1996.
17. J. H. Stephen, "Low noise junction field effect transistors exposed to intense ionizing radiation," IEEE Trans. Nucl. Sci., vol. 33, pp. 1465-1470, Dec. 1986.
18. M. Chiwaki and T. Tomimasu, "The effect of radiation damage on the noise performances of FET's," IEEE Trans. Nucl. Sci., vol. 22, pp. 2696-2702.
19. W. Buttler, V. Liberal!, G. Lutz, F. Maloberti, P. F. Manfredi, V. Re, and V. Speziali, "Evolution in the criteria that underlie the design of a monolithic preamplifier system for microstrip detectors," Nucl. Instrum. Methods Phys. Res., vol. A288, p. 140, 1990.
20. M. Dentan et at., "DMILL, a mixed analog-digital radiation-hard BiCMOS technology for high energy physics electronics," IEEE Trans. Nucl. Sci., vol. 43, pt. II, p. 1763, June 1996.
21. P. F. Manfredi, A. Leona, E. Mandelli, V. Re, and V. Speziali, "Design hints for best noise and signal behavior in DMILL amplifiers," Nucl. Instrum. Methods Phys. Res., vol. A421, pp. 552-557, 1999.
22. P. F. Manfredi, G. Cesura, V. Re, and V. Speziali, "JFET-CMOS process to meet the requirements of tracking applications at short processing times," Nucl. Instrum. Methods Phys. Res., vol. A344, p. 166, 1994.
23. P. F. Manfredi, V. Re, and V. Speziali, "Monolithic JFET preamplifier with nonresistive charge reset," IEEE Trans. Nucl. Sci., vol. 45, p. 2257, 1998.
24. V. Re and F. Svelto, "Instrumentation for high accuracy noise charac-terization of front-end devices in detector applications," Nucl. Phys. B (Proc. Suppl. 44), p. 599, 1995.
25. "High accuracy measurement of the low-frequency noise of front-end P-channel FET's," Nucl. Phys. B (Proc. Suppl. 44), p. 607, 1995.
26. O. Flament et al, "Enhanced total dose damage in junction field effect transistors and related linear integrated circuits," IEEE Trans. Nucl. Sci., vol. 43, pp. 3060-3067, June 1996.
27. R. L. Pease et al., "A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment," IEEE Trans. Nucl. Sci., vol. 44, pp. 1981-1988, Dec. 1997.