Monolithic JFET preamplifier with nonresistive charge reset

IEEE Transactions on Nuclear Science

Volumn 45, Issue 4 PART 3, 1998, Pages 2257-2260

  Manfredi, P F ^a,b   Re, V ^a,b   Speziali, V ^a,b  

^a Dipartimento di Elettronica   (Italy)

^b INFN SEZIONE DI PAVIA   (Italy)

Author keywords

Front end electronics; Low noise; Nonresistive feedback

Indexed keywords

FEEDBACK; JUNCTION GATE FIELD EFFECT TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTOR JUNCTIONS; X RAY SPECTROSCOPY;

FRONT-END ELECTRONICS; NONRESISTIVE CHARGE RESET;

AMPLIFIERS (ELECTRONIC);

EID: 0032141720     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.709654     Document Type: Article

References (8)

1. V. Radeka, S. Rescia, P. F. Manfredi, V. Re, and V. Speziali, "Monolithic preamplifier employing epitaxial N-channel JFET's," Nucl. Instrum. Methods A, vol. 326, p. 77, 1993.
2. V. Radeka, S. Rescia, L. A. Rehn, P. F. Manfredi, and V. Speziali, "Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity haron colliders," IEEE Trans. Nucl. Sci., vol. 40, p. 1321, 1993.
3. V. Radeka, S. Rescia, P. F. Manfredi, V. Speziali, and F. Svelto, "JFET monolithic preamplifier with outstanding noise behavior and radiation hardness characteristics," IEEE Trans. Nucl. Sci., vol. 40, p. 744, 1993.
4. F. Lanni, P. F. Manfredi, V. Radeka, S. Rescia, V. Re, and V. Speziali, "Monolithic silicon JFET front-end for calorimetry," Nucl. Instrum. Methods A, vol. 360, p. 158, 1995.
5. P. F. Manfredi, V. Re, and V. Speziali, "JFET-hased monolithic preamplifiers for spectrometry applications," Nucl. Instrum. Methods A, vol. 380, p. 308, 1996.
6. P. F. Manfredi and V. Speziali, Noise Limits in Detector Charge Measurements, Techniques and Concepts of High Energy Physics, vol. V. New York: Plenum, 1991, p. 381.
7. G. Bertuccio, P. Rehak, and D. Xi, "A novel charge sensitive preamplifier without feedback resistor," Nucl. Instrum. Methods in Phys. Res. A, vol. 326, p. 71, 1993.
8. G. Bertuccio et al., "Silicon drift detector integrated P-JFET for continuous discharge of collected electrons through the gate junction," Nucl. Instrum. Methods in Phys. Res. A, vol. 377, p. 352, 1996.