DMILL, A mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1763-1767

  Dentan, M ^a   Abbon, P ^a   Borgeaud, P ^a   Delagnes, E ^a   Fourches, N ^a   Lachartre, D ^a   Lugiez, F ^a   Paul, B ^a   Rouger, M ^a   Truche, R ^b   Blanc, J P ^b   Leroux, C ^b   Delevoye Orsier, E ^b   Pelloie, J L ^b   De Pontcharra, J ^b   Flament, O ^c   Guebhard, J M ^c   Leray, J L ^c   Montaron, J ^c   Musseau, O ^c   Vitez, A ^c   Blanquart, L ^d   Aubert, J J ^d   Bonzom, V ^d   Delpierre, P ^d   Habrard, M C ^d   Mekkaoui, A ^d   Potheau, R ^d   Ardelean, J ^e   Hrisoho, A ^e   Breton, D ^e   more..

^a CEA SACLAY   (France)

^b CEA LETI   (France)

^c CEA DIF   (France)

^d AIX MARSEILLE UNIVERSITÉ   (France)

^e UNIVERSITÉ PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG TO DIGITAL CONVERSION; BIPOLAR TRANSISTORS; ELECTRIC CURRENTS; ELECTRONIC EQUIPMENT; HIGH ENERGY PHYSICS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MICROELECTRONICS; PARTICLE DETECTORS; READOUT SYSTEMS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; VLSI CIRCUITS;

ANALOG DIGITAL MICROELECTRONICS; ANALOG DIGITAL RADIATION HARD; BICMOS TECHNOLOGY; HIGH ENERGY PHYSICS ELECTRONICS; LARGE HADRON COLLIDER; MONOLITHIC INTEGRATION;

CMOS INTEGRATED CIRCUITS;

EID: 0030168723     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.507218     Document Type: Article

References (13)

1. "A Mixed Analog-Digital Radiation-Hard Technology for High Energy Physics Electronics: DMILL (Durci Mixte sur Isolant Logico-Lineaire)". R&D proposal, CERN/DRDC/92-32/P42.
2. "DMILL, A Mixed Analog-Digital Radiation-Hard Technology for High Energy Physics Electronics", CERN/DRDC/93-45, RD29 Status Report, 19 Oct. 93.
3. "DMILL, A Mixed Analog-Digital Radiation-Hard Technology for High Energy Physics Electronics", CERN/LHCC/95-13, LERB / RD29 Status Report, 03 March 1995.
4. M. Dentan et Al., "Study of a CMOS-JFET-Bipolar Radiation-Hard Analog-Digital Technology Suitable for High Energy Physics Electronics", IEEE TNS vol.40, N°6, Dec. 93.
5. O. Flament et Al., "Radiation Effets on SOI Analog Devices Parameters", IEEE TNS 41(3)p.565, June 94.
6. JP. Blanc et Al., "A Six Devices New Technology for Mixed Analog-Digital and Rad-Hard Applications", Proc. ESSDERC 1993.
7. L. Blanquart et AL., Study of Proton Radiation Effects on Analog IC Designed for High Energy Physics in a BiCMOS-JFET Rad-Hard Technology", IEEE TNS, Dec. 94.
8. J. Ardelean et Al., "Preamplifiers for Room Temperature and Cryogenic Calorimetry Applications Based on DMILL Technology", submitted to Nuclear Inst. and Methods.
9. ATLAS technical proposal, CERN/LHCC/94-43(Dec 94).
10. E. Augé et Al.,CERN ATLAS internal note LARG-NO-13 (1994)
11. E. Augé et Al., "The PSALM project", Vth international conference on calorimetry in H.E.P. B.N.L., oct 94.
12. B.J. Sheu et AL., "Switch-induced error voltage on a switched capacitor", IEEE JSSC, Vol SC19,n°4, Aug. 84.
13. O, Flament et Al, "CMOS Radiation Hardening Level Above 100 Mrads(SiO2): Demonstrations and Verifications Concerning DMILL SOI Technology"; to be published in IEEE-TNS.