Effects of ionising radiation on the noise properties of electron devices and monolithic circuits

Radiation Physics and Chemistry

Volumn 37, Issue 4, 1991, Pages 623-627

  Manfredi, P F ^a   Speziali, V ^a  

^a UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION CHEMISTRY; TRANSISTORS, FIELD EFFECT--RADIATION EFFECTS;

EQUIVALENT NOISE CHARGE (ENC); FRONT-END PREAMPLIFIERS; INPUT EQUIVALENT NOISE CHARGE (ENC); IONIZING RADIATION; LOW-NOISE CIRCUITS;

INTEGRATED CIRCUITS, MONOLITHIC;

CONFERENCE PAPER; CONTROLLED STUDY; ELECTRONICS; INSTRUMENTATION; IONIZING RADIATION; NOISE;

EID: 0026073877     PISSN: 01465724     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (7)