A physical model for random telegraph signal currents in semiconductor devices

Journal of Applied Physics

Volumn 66, Issue 2, 1989, Pages 937-948

  Kandiah, K ^a   Deighton, M O ^b   Whiting, F B ^c  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b CULHAM SCIENCE CENTRE   (United Kingdom)

^c Link Analytical Ltd ^*  (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001016014     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.343523     Document Type: Article

References (0)