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1
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0026137568
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Monolithic, radiation hard charge sensitive preamplifier using N-channel junction field effect transistors
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P.F. Manfredi, S. Rescia, V. Radeka, V. Speziali: Monolithic, radiation hard charge sensitive preamplifier using N-channel junction field effect transistors. IEEE Trans. Nucl. Sci. NS-38, 2, (1991) 83.
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Manfredi, P.F.1
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Radeka, V.3
Speziali, V.4
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2
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84939762332
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Monolithic Junction Field-Effect Transistor Charge Preamplifier for Calorimetry at High Luminosity Hadron Colliders
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Santa FE, New Mexico, November 2–9
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V. Radeka, S. Rescia, L.A. Rehn, P.F. Manfredi, V. Speziali: Monolithic Junction Field-Effect Transistor Charge Preamplifier for Calorimetry at High Luminosity Hadron Colliders. Conference Record of the 1991 IEEE Nuclear Science Symposium, Santa FE, New Mexico, November 2–9, 1991.
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Conference Record of the 1991 IEEE Nuclear Science Symposium
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Radeka, V.1
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Rehn, L.A.3
Manfredi, P.F.4
Speziali, V.5
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3
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0027560407
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Monolithic preamplifier employing epitaxial N-channel JFETs
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V. Radeka, S. Rescia, P.F. Manfredi, V. Re, V. Speziali: Monolithic preamplifier employing epitaxial N-channel JFETs. Nucl. Instr. and Meth. A326 (1993) 77.
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Re, V.4
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4
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84939750072
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Radiation sensitivity of noise in monolithic JFET circuits exposed to 60Co γ-rays
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Paper presented at International Conference on Advanced Technology and Particle Physics, Villa Olmo, Como, June 22–26
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G. Cesura, V. Re, A. Tomasini: Radiation sensitivity of noise in monolithic JFET circuits exposed to 60 Co γ-rays. Paper presented at International Conference on Advanced Technology and Particle Physics, Villa Olmo, Como, June 22–26, 1992.
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Cesura, G.1
Re, V.2
Tomasini, A.3
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5
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84939707170
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The state-of-the-art of low noise front-end electronics
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Paper presented at International Conference on Advanced Technology and Particle Physics, Villa Olmo, Como, June 22–26
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P.F. Manfredi, V. Speziali: The state-of-the-art of low noise front-end electronics. Paper presented at International Conference on Advanced Technology and Particle Physics, Villa Olmo, Como, June 22–26, 1992.
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Manfredi, P.F.1
Speziali, V.2
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6
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84939765534
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Radiation hardness characteristics of JFETs in front-end design
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Paper presented at Workshop on Front-end Electronics for Silicon Detectors at Future High Luminosity Colliders, September 17–19, Y.N.P.
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P.F. Manfredi. Radiation hardness characteristics of JFETs in front-end design. Paper presented at Workshop on Front-end Electronics for Silicon Detectors at Future High Luminosity Colliders, September 17–19, 1992, Y.N.P.
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Manfredi, P.F.1
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7
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84922488183
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Low noise field effect transistors exposed to intense ionizing radiation
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J. H. Stephen: Low noise field effect transistors exposed to intense ionizing radiation. IEEE Trans. Nucl. Sci. NS-33 (1986) 1465.
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Stephen, J.H.1
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8
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84939698706
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Results of the preliminary exposure of Si and GaAs preamplifiers to a high neutron fluence and to gamma rays
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G. Battistoni, D.V. Camin, C. De La Taille, A. Fassò, A. Ferrari, B. Merkel, F. Sabatini, M. Sciamanna, G.R. Stevenson: Results of the preliminary exposure of Si and GaAs preamplifiers to a high neutron fluence and to gamma rays. CERN-RD3 internal report.
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CERN-RD3 internal report
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Battistoni, G.1
Camin, D.V.2
De La Taille, C.3
Fassò, A.4
Ferrari, A.5
Merkel, B.6
Sabatini, F.7
Sciamanna, M.8
Stevenson, G.R.9
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84939700076
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private communication
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R.L. Chase, private communication.
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Chase, R.L.1
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