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Volumn 40, Issue 4, 1993, Pages 744-749

JFET Monolithic Preamplifier with Outstanding Noise Behaviour and Radiation Hardness Characteristics

Author keywords

[No Author keywords available]

Indexed keywords

CALORIMETERS; COLLIDING BEAM ACCELERATORS; FIELD EFFECT TRANSISTORS; RADIATION HARDENING;

EID: 0027646314     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.256654     Document Type: Article
Times cited : (20)

References (9)
  • 1
    • 0026137568 scopus 로고
    • Monolithic, radiation hard charge sensitive preamplifier using N-channel junction field effect transistors
    • P.F. Manfredi, S. Rescia, V. Radeka, V. Speziali: Monolithic, radiation hard charge sensitive preamplifier using N-channel junction field effect transistors. IEEE Trans. Nucl. Sci. NS-38, 2, (1991) 83.
    • (1991) IEEE Trans. Nucl. Sci , vol.NS-38 , Issue.2 , pp. 83
    • Manfredi, P.F.1    Rescia, S.2    Radeka, V.3    Speziali, V.4
  • 4
    • 84939750072 scopus 로고
    • Radiation sensitivity of noise in monolithic JFET circuits exposed to 60Co γ-rays
    • Paper presented at International Conference on Advanced Technology and Particle Physics, Villa Olmo, Como, June 22–26
    • G. Cesura, V. Re, A. Tomasini: Radiation sensitivity of noise in monolithic JFET circuits exposed to 60 Co γ-rays. Paper presented at International Conference on Advanced Technology and Particle Physics, Villa Olmo, Como, June 22–26, 1992.
    • (1992)
    • Cesura, G.1    Re, V.2    Tomasini, A.3
  • 5
    • 84939707170 scopus 로고
    • The state-of-the-art of low noise front-end electronics
    • Paper presented at International Conference on Advanced Technology and Particle Physics, Villa Olmo, Como, June 22–26
    • P.F. Manfredi, V. Speziali: The state-of-the-art of low noise front-end electronics. Paper presented at International Conference on Advanced Technology and Particle Physics, Villa Olmo, Como, June 22–26, 1992.
    • (1992)
    • Manfredi, P.F.1    Speziali, V.2
  • 6
    • 84939765534 scopus 로고
    • Radiation hardness characteristics of JFETs in front-end design
    • Paper presented at Workshop on Front-end Electronics for Silicon Detectors at Future High Luminosity Colliders, September 17–19, Y.N.P.
    • P.F. Manfredi. Radiation hardness characteristics of JFETs in front-end design. Paper presented at Workshop on Front-end Electronics for Silicon Detectors at Future High Luminosity Colliders, September 17–19, 1992, Y.N.P.
    • (1992)
    • Manfredi, P.F.1
  • 7
    • 84922488183 scopus 로고
    • Low noise field effect transistors exposed to intense ionizing radiation
    • J. H. Stephen: Low noise field effect transistors exposed to intense ionizing radiation. IEEE Trans. Nucl. Sci. NS-33 (1986) 1465.
    • (1986) IEEE Trans. Nucl. Sci , vol.NS-33
    • Stephen, J.H.1
  • 9
    • 84939700076 scopus 로고    scopus 로고
    • private communication
    • R.L. Chase, private communication.
    • Chase, R.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.