Properties of ferromagnetic III–V semiconductors

Journal of Magnetism and Magnetic Materials

Volumn 200, Issue 1-3, 1999, Pages 110-129

  Ohno, Hideo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Alloys; Heterostructures; Semiconductors ferromagnetic

Indexed keywords

ALLOYING; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; HETEROJUNCTIONS; MANGANESE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICES; TEMPERATURE; MAGNETORESISTANCE; MULTILAYERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SOLUBILITY;

ELECTRONIC DEVICE; FERROMAGNETIC SEMICONDUCTOR; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; MAGNETIC ELEMENTS; QUANTUM STRUCTURE; SEMICONDUCTOR HETEROSTRUCTURE; SEMICONDUCTORS-FERROMAGNETIC; SOLUBILITY LIMITS; GIANT MAGNETORESISTANCE; MAGNETIC ELEMENT; QUANTUM STRUCTURES;

MAGNETISM; MAGNETIC SEMICONDUCTORS;

EID: 0033204760     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(99)00444-8     Document Type: Article

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