Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 183-188

  Shen, A ^a,c   Matsukura, F ^a   Sugawara, Y ^a   Kuroiwa, T ^a   Ohno, H ^a   Oiwa, A ^b   Endo, A ^b   Katsumoto, S ^b   Iye, Y ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

Author keywords

Diluted magnetic semiconductors; Ferromagnetic order; III V compounds; Magnetic anisotropy; Molecular beam epitaxy; Superparamagnetism

Indexed keywords

FERROMAGNETISM; LOW TEMPERATURE PROPERTIES; MAGNETIC ANISOTROPY; MAGNETIC PROPERTIES; MAGNETIC VARIABLES MEASUREMENT; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; THREE DIMENSIONAL;

ALUMINUM GALLIUM ANTIMONIDE; DILUTED MAGNETIC SEMICONDUCTOR; INDIUM MANGANESE ARSENIDE; MAGNETOTRANSPORT; SUPERPARAMAGNETISM; TWO DIMENSIONAL;

HETEROJUNCTIONS;

EID: 0031547321     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00865-3     Document Type: Article

References (6)

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