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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 2 PART A, 1997, Pages

(Ga, Mn)As/GaAs diluted magnetic semiconductor superlattice structures prepared by molecular beam epitaxy

(7) Shen, Aidong a,c Ohno, Hideo a,b Matsukura, Fumihiro a Sugawara, Yasuhiro a Ohno, Yuzo a Akiba, Norimitsu a Kuroiwa, Tatsuo a

a TOHOKU UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS (China)

Author keywords

(Ga, Mn)As; Diluted magnetic semiconductor; Ferromagnetic film; GaAs; III V compound; Molecular beam epitaxy; Superlattice

Indexed keywords

FERROMAGNETIC MATERIALS; FILM PREPARATION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES; X RAY CRYSTALLOGRAPHY;

MAGNETOTRANSPORT MEASUREMENTS;

MAGNETIC SEMICONDUCTORS;

EID: 0031070427 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.l73 Document Type: Article

Times cited : (43)

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- A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, T. Kuroiwa, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye: to be published in J. Cryst. Growth.
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- F. Matsukura, A. Oiwa, A. Shen, Y. Sugawara, N. Akiba, T. Kuroiwa, H. Ohno, A. Endo, S. Katsumoto and Y. Iye: to be published in Appl. Surf. Sci.
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