Magnetic and transport properties of III-V based magnetic semiconductor (GaMn)As: Growth condition dependence

Applied Physics Letters

Volumn 74, Issue 3, 1999, Pages 398-400

  Shimizu, Hiromasa ^a   Hayashi, Toshiaki ^a   Nishinaga, Tatau ^a   Tanaka, Masaaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; LATTICE CONSTANTS; LOW TEMPERATURE EFFECTS; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

FERROMAGNETIC TRANSITION TEMPERATURE; HOLE CONCENTRATION; MAGNETIC SEMICONDUCTOR;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033579748     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123082     Document Type: Article

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