The s,p-d exchange interaction in GaAs heavily doped with Mn

Solid State Communications

Volumn 99, Issue 12, 1996, Pages 927-931

  Szczytko, J ^a   Mac, W ^a   Stachow, A ^a   Twardowski, A ^a   Becla, P ^b   Tworzydlo J ^a  

^a UNIVERSITY OF WARSAW   (Poland)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A. semiconductors; C. Impurities in semiconductors; D. exchange and superexchange; E. light absorption and reflection; Optical properties

Indexed keywords

CRYSTAL IMPURITIES; EXCITONS; FERROMAGNETISM; ION EXCHANGE; LIGHT ABSORPTION; LIGHT REFLECTION; MAGNETIC SEMICONDUCTORS; MAGNETOOPTICAL EFFECTS; MANGANESE; SEMICONDUCTOR DOPING;

EXCITON SPLITTING; POLARIZED MAGNETOREFLECTANCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030242958     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00315-8     Document Type: Article

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