Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure

Applied Physics Letters

Volumn 71, Issue 11, 1997, Pages 1540-1542

  Shen, A ^a,c   Horikoshi, Y ^b   Ohno, H ^a   Guo, S P ^a,d  

^a TOHOKU UNIVERSITY   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^d SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001260729     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119973     Document Type: Article

References (18)

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17. Although the effect of the excess As overlayer is quite similar to that of a surfactant. The real process is different. In surfactant-mediated MBE, the surfactant keeps on segregating to the sample surface. In the current case, the excess As overlayer is in a dynamical equilibrium process.
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