Tunneling spectroscopy and tunneling magnetoresistance in (GaMn)As ultrathin heterostructures

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 689-692

  Hayashi, T ^a   Shimada, H ^b   Shimizu, H ^a   Tanaka, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRON TUNNELING; ENERGY GAP; FERMI LEVEL; GOLD; MAGNETIC SEMICONDUCTORS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TUNNEL JUNCTIONS;

COULOMB GAP; TUNNELING SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0032656283     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01440-7     Document Type: Article

References (21)

1. Hayashi T., Tanaka M., Nishinaga T., Shimada H., Tsuchiya H., Ootuka Y. 9th International Conf. on Molecular Beam Epitaxy, Malibu, August 1996. J. Crystal Growth. 175/176:1997;1063.
2. Hayashi T., Tanaka M., Nishinaga T., Shimada H. 41st Conference on Magnetism and Magnetic Materials, Atlanta, November 1996. J. Appl. Phys. 81:1997;4865.
3. Ohno H., Shen A., Matsukura F., Oiwa A., Endo A., Katsumoto S., Iye Y. Appl. Phys. Lett. 69:1996;363.
4. Shen A., Ohno H., Matsukura F., Sugawara Y., Akiba N., Kuroiwa T., Oiwa A., Endo A., Katsumoto S., Iye Y. J. Crystal Growth. 175/176:1997;1069.
5. Hayashi T., Tanaka M., Seto K., Nishinaga T., Ando K. Appl. Phys. Lett. 71:1997;1825.
6. Mersevey R., Tedrow P.M. Phys. Rep. 238:1994;173.
7. Baibich M.N., Broto J.M., Fert A., Nguyen Van Dau J., Petroff F., Etienne P., Creuzet G., Friederich A. J. Chazelas, Phys. Rev. Lett. 61:1998;2472.
8. Julliere M. Phys. Lett. A. 54:1975;225.
9. S. Maekawa, U. Gafvert, IEEE Trans. Magn. Mag-18 (1982) 707.
10. Slonczewski J.C. Phys. Rev. B. 39:1989;6995.
11. Simmons J.G. J. Appl. Phys. 34:1963;1793.
12. Wolf E.L. Principles of Electron Tunneling Spectroscopy. 1985;Oxford University Press, Oxford.
13. Lee M., Massey J.G. Phys. Stat. Sol. B. 205:1998;25.
14. Sandow B., Gloos K., Naidyuk Yu., Rentzsch R., Ionov A.N. Phys. Stat. Sol. B. 205:1998;281.
15. Shklovskii B.I., Efros A.L. Electronic Properties of Doped Semiconductors. 1984;Springer, Berlin.
16. Katsumoto S., Oiwa A., Iye Y., Ohno H., Matsukura F., Shen A., Sugawara Y. Phys. Stat. Sol. B. 205:1998;115.
17. Muller C.J., van Ruitenbeek J.M., de Jongh L.J. Physica C. 191:1992;485.
18. Levin E.I., Nguen V.L., Shklovskii B.I., Efros A.L. Sov. Phys.-J. Exper. Theor. Phys. 65:1987;842.
19. Vojta T., John W., Schreiber M. J. Phys. Condensed Matter 5:1993;4989.
20. Sarvestani M., Schreiber M., Vojta T. Phys. Rev. B. 52:1995;R3820.
21. Grannan E.R., Yu C.C. Phys. Rev. Lett. 71:1993;3335.