III-V based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlattices

Applied Physics Letters

Volumn 71, Issue 13, 1997, Pages 1825-1827

  Hayashi, T ^a   Tanaka, M ^a,b   Seto, K ^a   Nishinaga, T ^a   Ando, K ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; PARAMAGNETISM; QUANTUM THEORY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; DILUTED MAGNETIC SEMICONDUCTOR; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; MAGNETIC CIRCULAR DICHROISM; MAGNETOOPTICAL PROPERTIES; QUANTUM CONFINEMENT;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031220005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119411     Document Type: Article

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