Temperature and applied voltage dependence of magnetoresistance ratio in Fe/Al oxide/Fe junctions

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 2 SUPPL. B, 1998, Pages

  Tezuka, Nobuki ^a   Miyazaki, Terunobu ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Al oxide; Fe; Temperature and applied voltage dependence; Tunnel magnetoresistance effect; Zero bias anomaly

Indexed keywords

IRON; MAGNETIZATION; OXIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE; THERMAL EFFECTS;

TUNNEL MAGNETORESISTANCE RATIO;

MAGNETORESISTANCE;

EID: 0031999894     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.L218     Document Type: Article

References (14)

1. M. Julliere: Phys. Lett., 54A (1975) 225.
2. N. Tezuka, Y. Ando and T. Miyazaki: J. Magn. Soc. Jpn. 19 (1995)369.
3. N. Tezuka, Y. Ando, T. Miyazaki, H. G. Tompkins, S. Tehrani and H. Goronkin: J. Magn. Soc. Jpn. 21 (1997) 493.
4. S. Maekawa and U. Gäfvert: IEEE Trans. Magn. MAG-18 (1982) 707.
5. J. C. Slonczewski: Phys. Rev. B 39 (1989) 6995.
6. S. S. P. Parkin, R. E. Fontana, A. C. Marley and M. Dover:J. Appl. Phys. 81 (1997) 5521.
7. M. Sato and K. Kobayashi: Jpn. J. Appl. Phys. 36 (1997) L200.
8. S. Kumagai, N. Tezuka and T. Miyazaki: Jpn. J. Appl. Phys. 36 (1997) L1498.
9. T. Miyazaki and N. Tezuka: J. Magn. & Magn. Mater. 109 (1995) 79.
10. L .Y. L. Shen and J. M. Rowell: Phys. Rev. 165 (1968) 566.
11. J. Appelbaum: Phys. Rev. Lett. 17 (1966) 91.
12. P. W. Anderson: Phys. Rev. Lett. 17 (1966) 95.
13. J. Inoue and S. Maekawa: Phys. Rev., in press.
14. R. Meservey and P. M. Tedrow: Phys. Rep. 239 (1994) 174.