Voltage dependence of magnetoresistance in spin dependent tunneling junctions

Journal of Applied Physics

Volumn 83, Issue 11, 1998, Pages 6512-6514

  Zhang, J ^a   White, R M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001424331     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367644     Document Type: Article

References (10)

1. J. S. Moodera and L. R. Kinder, J. Appl. Phys. 79, 4724 (1996).
2. W. J. Gallagher, S. S. P. Parkin, Y. Lu, X. P. Bian, A. Marley, K. P. Roche, R. A. Altman, S. A. Rishton, C. Jahnes, T. M. Shaw, and G. Xiao, J. Appl. Phys. 81, 3741 (1997).
3. A. C. Marley and S. S. P. Parkin, J. Appl. Phys. 81, 5526 (1997).
4. R. S. Beech, J. Anderson, J. Daughton, B. A. Everitt, and D. Wang, IEEE Trans. Magn. 32, 4713 (1996).
5. W. Schroen, J. Appl. Phys. 39, 2671 (1968).
6. J. H. Greiner, J. Appl. Phys. 42, 5151 (1971).
7. M. Julliere, Phys. Lett. A 54, 225 (1975).
8. E. L. Wolf, Principles of Electron Tunneling Spectroscopy (Oxford University Press, Oxford, 1985).
9. P. P. Apte and K. C. Saraswat, IEEE Trans. Electron Devices 41, 1595 (1994).
10. J. Zhang, Ph.d. dissertation, Carnegie Mellon University, 1997.