Spin dependent tunneling devices fabricated using photolithography

IEEE Transactions on Magnetics

Volumn 32, Issue 5 PART 2, 1996, Pages 4713-4715

  Beech, Russell S ^a   Anderson, John ^a   Daughton, Jim ^a   Everitt, Brenda A ^a   Wang, Dexin ^a  

^a NVE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIPMENT TESTING; FABRICATION; MAGNETIC FIELDS; MAGNETIC FILMS; MAGNETORESISTANCE; METALLIZING; PHOTOLITHOGRAPHY; PROCESSING; SATURATION (MATERIALS COMPOSITION); SPUTTERING;

BIAS; HARD LAYER SWITCHING FIELD; INTEGRATED METALLIZATION; MEMORY OPERATION; READ WRITE FIELDS; SATURATION FIELD; SPIN DEPENDENT TUNNELING DEVICES;

MAGNETIC DEVICES;

EID: 0030247320     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.539127     Document Type: Article

References (2)

1. J. S. Moodera, Lisa R. Kinder, Terrilyn M. Wong, and R. Meservey, "Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions," Physical Review Letters, 74, pp. 3273-6, April 1995.
2. 3/Fe junction," Journal of Magnetism and Magnetic Materials, 139, pp. L231-4,1995.