Picotesla field sensor design using spin-dependent tunneling devices

Journal of Applied Physics

Volumn 83, Issue 11, 1998, Pages 6688-6690

  Tondra, Mark ^a   Daughton, James M ^a   Wang, Dexin ^a   Beech, Russell S ^a   Fink, Anita ^a   Taylor, John A ^a  

^a NVE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; COERCIVE FORCE; ELECTRODES; ELECTRON TUNNELING; HYSTERESIS; LITHOGRAPHY; MAGNETORESISTANCE; SENSORS; SIGNAL TO NOISE RATIO; SPUTTERING; THIN FILMS; TRANSDUCERS;

BIAS LEVEL; DEVICE SIZE; JUNCTION MAGNETORESISTANCE; PICOTESLA FIELD SENSOR; SPIN DEPENDENT TUNNELING DEVICES; TUNNELING RESISTIVITY;

TUNNEL JUNCTIONS;

EID: 0032099634     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367861     Document Type: Article

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