GaN metal oxide semiconductor field effect transistors

Solid-State Electronics

Volumn 43, Issue 9, 1999, Pages 1817-1820

  Ren, F ^a   Pearton, S J ^a   Abernathy, C R ^a   Baca, A ^b   Cheng, P ^b   Shul, R J ^b   Chu, S N G ^c   Hong, M ^c   Schurman, M J ^d   Lothian, J R ^e  

^a UNIVERSITY OF FLORIDA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d EMCORE Corporation   (United States)

^e Multiplex Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GADOLINIUM COMPOUNDS; GATES (TRANSISTOR); NITRIDES; OSCILLATIONS; PLATINUM; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

GALLIUM NITRIDE; GATE DIELECTRICS; SCHOTTKY GATES;

MOSFET DEVICES;

EID: 0033184799     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00116-1     Document Type: Letter

References (13)

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