Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers

Applied Physics Letters

Volumn 69, Issue 2, 1996, Pages 248-250

  Fukunaga, Toshiaki ^a   Wada, Mitsugu ^a   Hayakawa, Toshiro ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; CRYSTAL DEFECTS; CRYSTALS; CURRENT DENSITY; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TESTING; THERMAL EFFECTS;

AGING TEST; CARRIER LEAKAGE; INDIUM GALLIUM ARSENIC; INDIUM GALLIUM ARSENIC PHOSPHIDE; LIGHT CURRENT CHARACTERISTICS; STRAIN COMPENSATION BARRIERS;

QUANTUM WELL LASERS;

EID: 0030575230     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117939     Document Type: Article

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