Temperature dependence of the threshold current and the lasing wavelength in 1.3-μm GaInNas/GaAs single quantum well laser diode

Optical Review

Volumn 5, Issue 2, 1998, Pages 69-71

  Kitatani, Takeshi ^a   Kondow, Masahiko ^a   Nakahara, Koji ^a   Larson, M C ^b,c   Uomi, Kazuhisa ^b  

^a NEC CORPORATION   (Japan)

^b HITACHI LTD   (Japan)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Quantum well; Semiconductor junction lasers

Indexed keywords

EID: 0032382424     PISSN: 13406000     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10043-998-0069-x     Document Type: Article

References (7)

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