Strained-ayer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD

IEEE Photonics Technology Letters

Volumn 10, Issue 3, 1998, Pages 489-491

  Jones, A M ^a,b   Coleman, J J ^a,b   Lent, B ^c   Moore, A H ^d   Bonner, W A ^e  

^a IEEE   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c Johnson Matthey Electronics   (Canada)

^d Optoelectronics Division   (Canada)

^e Crystalled Inc   (United States)

Author keywords

Compensation; Crystal growth; Quantum well lasers; Semiconductor growth; Semiconductor lasers; Semiconductor materials; Strain

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

SELECTIVE AREA EPITAXY (SAE);

QUANTUM WELL LASERS;

EID: 0342441277     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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