A Silicon Carbide CMOS Intelligent Gate Driver Circuit with Stable Operation over a Wide Temperature Range

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 2, 1999, Pages 192-204

  Chen, Jian Song ^a,c,d,e   Kornegay, Kevin T ^{a,b,f,g,h,i,j}   Ryu, Sei Hyung ^a  

^a PURDUE UNIVERSITY   (United States)

^b Cornell University   (United States)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d WINBOND ELECTRONICS CORPORATION   (Taiwan)

^e TEXAS INSTRUMENTS   (United States)

^f PRATT INSTITUTE   (United States)

^g UNIVERSITY OF CALIFORNIA   (United States)

^h LUCENT TECHNOLOGIES   (United States)

ⁱ IBM T J WATSON RESEARCH CENTER   (United States)

^j MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

more..

Author keywords

Silicon carbide; Smart power; Wide bandgap

Indexed keywords

AIRCRAFT ENGINES; AUTOMOBILE ENGINES; COMPARATOR CIRCUITS; GATES (TRANSISTOR); SILICON CARBIDE; SWITCHING;

HIGH POWER SWITCHING;

CMOS INTEGRATED CIRCUITS;

EID: 0033078665     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.743772     Document Type: Article

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