A new method to determine effective MOSFET channel length

Japanese Journal of Applied Physics

Volumn 18, Issue 5, 1979, Pages 953-959

  Terada, Kazuo ^a   Muta, Hiroki ^a  

^a Nippon Electric CoLtd ^*  (India)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0018468995     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.18.953     Document Type: Article

References (10)

1. D. L. Critchlow, R. H. Dennard and S. E. Schuster: IBM J. Res. & Dev. 17 (1973) 430.
2. R. H. Dennard, F. H. Gaensslen, H. Yu, V. L. Rideout, E. Bassous and A. R. Leblanc: IEEE Trans. Solid-State Circuits SC-9 (1974) 256.
3. H. S. Lee: Solid-State Electron. 16 (1973) 1407.
4. L. D. Yau: Solid-State Electron. 17 (1974) 1059.
5. W. R. Bandy and D. P. Kokalis: Solid-State Electron. 20 (1977) 675.
6. L. M. Dang: Solid-State Electron. 20 (1977) 825.
7. D. J. Coe, H. E. Brockman and K. H. Nicholas: Solid-State Electron. 20 (1977) 993.
8. E. Pan and F. F. Fang: J. Appl. Phys. 45 (1974) 2801.
9. H. Masuda: Trans. IECE Japan J61-C (1978) 183.
10. R. R. Troutman and A. G. Fortino: IEEE Trans. Electron Devices ED-24 (1977) 1266.