-
2
-
-
0004286686
-
-
New York: Wiley
-
B. J. Baliga, Modern Power Devices. New York: Wiley. 1987. D. A. Grant and J. Gowar, Power MOSFETs. New York: Wiley, 1989.
-
(1989)
Modern Power Devices
-
-
Baliga, B.J.1
-
3
-
-
0025545966
-
Impact of VLSI technology on power devices
-
B. J. Baliga, “Impact of VLSI technology on power devices,” in SSDM Dig., 1990, Abstr. A-l-2, pp. 5–9.
-
(1990)
SSDM Dig.
, pp. 5-9
-
-
Baliga, B.J.1
-
4
-
-
0025414063
-
Optimally scaled low-voltage vertical power MOSFETs for high frequency power conversion
-
K. Shenai, “Optimally scaled low-voltage vertical power MOSFET’s for high frequency power conversion,” IEEE Trans. Electron Devices. vol. 37, pp. 1141–1153, 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 1141-1153
-
-
Shenai, K.1
-
5
-
-
0024749835
-
Power semiconductor device figure of merit
-
B. J. Baliga, “Power semiconductor device figure of merit,” IEEE Electron Device Lett., vol. 10, pp. 455–457, 1989.
-
(1989)
IEEE Electron Device Lett.
, vol.10
, pp. 455-457
-
-
Baliga, B.J.1
-
8
-
-
0005283642
-
Switching speed enhancement in IGBTs by electron irradiation
-
B. J. Baliga, “Switching speed enhancement in IGBT’s by electron irradiation,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1790—1795, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 1790
-
-
Baliga, B.J.1
-
9
-
-
0024087376
-
The dynamic performance of current sensing power MOSFETs
-
D. A. Grant and R. Pearce, “The dynamic performance of current sensing power MOSFETs,” Electron, Lett., vol. 24, pp. 1129–1131, 1988.
-
(1988)
Electron, Lett.
, vol.24
, pp. 1129-1131
-
-
Grant, D.A.1
Pearce, R.2
-
10
-
-
0022866828
-
A new integrated silicon gate technology combining bipolar linear, CMOS logic, and DMOS power parts
-
A. Andreini, C. Contiero, and P. Galbiati, “A new integrated silicon gate technology combining bipolar linear, CMOS logic, and DMOS power parts,” IEEE Trans. Electron Devices, vol. ED-33, pp. 2025–2030, 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, pp. 2025-2030
-
-
Andreini, A.1
Contiero, C.2
Galbiati, P.3
-
12
-
-
84941529919
-
Special Issue on Power and High-Voltage Integrated Circuits
-
Dec. New York: IEEE PRESS, 1988. B. J. Baliga, Ed.
-
B. J. Baliga, High Voltage Integrated Circuits. New York: IEEE PRESS, 1988. B. J. Baliga, Ed., “Special Issue on Power and High-Voltage Integrated Circuits,” IEEE Trans. Electron Devices, vol. ED-33, pp. 1933–2045, Dec. 1986.
-
(1986)
High Voltage Integrated Circuits
, vol.ED-33
, pp. 1933-2045
-
-
Baliga, B.J.1
-
13
-
-
0025539380
-
High power transistor modules with intelligent functions
-
H. Shigekane, T. Hosen, N. Terasawa, K. Kuwabara, and Y. Inakoshi, “High power transistor modules with intelligent functions,” in Proc. Int. Symp. on Power Semiconductor Devices and ICs, 1990, Abstr. 4.2.3., pp. 150–155.
-
(1990)
Proc. Int. Symp. on Power Semiconductor Devices and ICs
, pp. 150-155
-
-
Shigekane, H.1
Hosen, T.2
Terasawa, N.3
Kuwabara, K.4
Inakoshi, Y.5
-
14
-
-
84941528705
-
New over-current protection circuit for smart power devices
-
T. Fujihara, N. Kumagai, K. Yoshida, K. Sakurai, S. Furuhata, and Y. Uchida, “New over-current protection circuit for smart power devices,” in Proc. Symp. on High Voltage and Smart Power ICs, 1989, pp. 392–399.
-
(1989)
Proc. Symp. on High Voltage and Smart Power ICs
, pp. 392-399
-
-
Fujihara, T.1
Kumagai, N.2
Yoshida, K.3
Sakurai, K.4
Furuhata, S.5
Uchida, Y.6
-
15
-
-
0022866828
-
A new integrated silicon gate technology combining linear, CMOS logic and DMOS power parts
-
A. Andreini, C. Contiero. and P. Galbiati, “A new integrated silicon gate technology combining linear, CMOS logic and DMOS power parts,” IEEE Trans. Electron Devices, vol. ED-33, pp. 2025–2030, 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, pp. 2025-2030
-
-
Andreini, A.1
Contiero, C.2
-
16
-
-
0025551403
-
-
N. Sakurai, M. Mori, and T. Yatsuo, “High speed, high current capacity LIGBT and diode for output stage of high voltage monolithic three-phase invertor IC,” in Proc. Int. Symp. on Power Semiconductor Devices and ICs, 1990, Abstr. 3.2.2, pp. 66–71.
-
(1990)
Proc. Int. Symp. on Power Semiconductor Devices and ICs
, pp. 66-71
-
-
Sakurai, N.1
Mori, M.2
-
17
-
-
0023422084
-
Analysis of a high voltage merged PIN/Schottky (MPS) rectifier
-
B. J. Baliga, “Analysis of a high voltage merged PIN/Schottky (MPS) rectifier,” IEEE Electron Device Lett., vol. EDL-8, pp. 407–409, 1987.
-
(1987)
IEEE Electron Device Lett.
, vol.EDL-8
, pp. 407-409
-
-
Baliga, B.J.1
|