메뉴 건너뛰기




Volumn 38, Issue 7, 1991, Pages 1568-1575

An Overview of Smart Power Technology

Author keywords

[No Author keywords available]

Indexed keywords

INDUSTRIAL ELECTRONICS--COMPONENTS; SEMICONDUCTOR DEVICES, MOSFET; TRANSISTORS, BIPOLAR;

EID: 0026188098     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.85151     Document Type: Article
Times cited : (121)

References (17)
  • 2
    • 0004286686 scopus 로고
    • New York: Wiley
    • B. J. Baliga, Modern Power Devices. New York: Wiley. 1987. D. A. Grant and J. Gowar, Power MOSFETs. New York: Wiley, 1989.
    • (1989) Modern Power Devices
    • Baliga, B.J.1
  • 3
    • 0025545966 scopus 로고
    • Impact of VLSI technology on power devices
    • B. J. Baliga, “Impact of VLSI technology on power devices,” in SSDM Dig., 1990, Abstr. A-l-2, pp. 5–9.
    • (1990) SSDM Dig. , pp. 5-9
    • Baliga, B.J.1
  • 4
    • 0025414063 scopus 로고
    • Optimally scaled low-voltage vertical power MOSFETs for high frequency power conversion
    • K. Shenai, “Optimally scaled low-voltage vertical power MOSFET’s for high frequency power conversion,” IEEE Trans. Electron Devices. vol. 37, pp. 1141–1153, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1141-1153
    • Shenai, K.1
  • 5
    • 0024749835 scopus 로고
    • Power semiconductor device figure of merit
    • B. J. Baliga, “Power semiconductor device figure of merit,” IEEE Electron Device Lett., vol. 10, pp. 455–457, 1989.
    • (1989) IEEE Electron Device Lett. , vol.10 , pp. 455-457
    • Baliga, B.J.1
  • 8
    • 0005283642 scopus 로고
    • Switching speed enhancement in IGBTs by electron irradiation
    • B. J. Baliga, “Switching speed enhancement in IGBT’s by electron irradiation,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1790—1795, 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1790
    • Baliga, B.J.1
  • 9
    • 0024087376 scopus 로고
    • The dynamic performance of current sensing power MOSFETs
    • D. A. Grant and R. Pearce, “The dynamic performance of current sensing power MOSFETs,” Electron, Lett., vol. 24, pp. 1129–1131, 1988.
    • (1988) Electron, Lett. , vol.24 , pp. 1129-1131
    • Grant, D.A.1    Pearce, R.2
  • 10
    • 0022866828 scopus 로고
    • A new integrated silicon gate technology combining bipolar linear, CMOS logic, and DMOS power parts
    • A. Andreini, C. Contiero, and P. Galbiati, “A new integrated silicon gate technology combining bipolar linear, CMOS logic, and DMOS power parts,” IEEE Trans. Electron Devices, vol. ED-33, pp. 2025–2030, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 2025-2030
    • Andreini, A.1    Contiero, C.2    Galbiati, P.3
  • 12
    • 84941529919 scopus 로고
    • Special Issue on Power and High-Voltage Integrated Circuits
    • Dec. New York: IEEE PRESS, 1988. B. J. Baliga, Ed.
    • B. J. Baliga, High Voltage Integrated Circuits. New York: IEEE PRESS, 1988. B. J. Baliga, Ed., “Special Issue on Power and High-Voltage Integrated Circuits,” IEEE Trans. Electron Devices, vol. ED-33, pp. 1933–2045, Dec. 1986.
    • (1986) High Voltage Integrated Circuits , vol.ED-33 , pp. 1933-2045
    • Baliga, B.J.1
  • 15
    • 0022866828 scopus 로고
    • A new integrated silicon gate technology combining linear, CMOS logic and DMOS power parts
    • A. Andreini, C. Contiero. and P. Galbiati, “A new integrated silicon gate technology combining linear, CMOS logic and DMOS power parts,” IEEE Trans. Electron Devices, vol. ED-33, pp. 2025–2030, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 2025-2030
    • Andreini, A.1    Contiero, C.2
  • 17
    • 0023422084 scopus 로고
    • Analysis of a high voltage merged PIN/Schottky (MPS) rectifier
    • B. J. Baliga, “Analysis of a high voltage merged PIN/Schottky (MPS) rectifier,” IEEE Electron Device Lett., vol. EDL-8, pp. 407–409, 1987.
    • (1987) IEEE Electron Device Lett. , vol.EDL-8 , pp. 407-409
    • Baliga, B.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.