SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Electronic Materials

Volumn 24, Issue 4, 1995, Pages 235-240

The effects of N+ dose in implantation into 6h-sic epilayers

(5) Kimoto, Tsunenobu a Itoh, Akira a Matsunami, Hiroyuki a Nakata, Toshitake b Watanabe, Masanori b

a KYOTO UNIVERSITY (Japan)

b Ion Eng Res Institute Corporation (Japan)

Author keywords

Electrical activation; implant dose; ion implantation; Raman; Rutherford backscattering spectroscopy; scattering; silicon carbide

Indexed keywords

EID: 51249162043 PISSN: 03615235 EISSN: 1543186X Source Type: Journal
DOI: 10.1007/BF02659681 Document Type: Article

Times cited : (71)

References (24)

1
- 84936524628
- Silicon Carbide and Related Materials, eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan and M.M. Rahman, (London: Institute of Physics, 1994).

2
- 0348135193
- (1981) J. Cryst. Growth , vol.52 , pp. 146
- Tairov¹ Tsvetkov, V.F.²

3
- 0023531069
- Business Center for Academic Soci- eties Japan, Tokyo
- (1987) Ext. Abstr. 19th Conf. on Solid State Devices and Materials , pp. 227
- Kuroda, N.¹ Shibahara, K.² Yoo, W.S.³ Nishino, S.⁴ Matsunami, H.⁵

4
- 0009314376
- (1988) J. Appl. Phys. , vol.64 , pp. 2672
- Kong, H.S.¹ Glass, J.T.² Davis, R.F.³

5
- 0027576098
- (1993) Physica B , vol.185 , pp. 461
- Palmour, J.W.¹ Edmond, J.A.² Kong, H.S.³ Carter, C.H.⁴

6
- 0028760358
- (1994) J. Cryst. Growth , vol.137 , pp. 181
- Hobgood, H.M.¹ Barrett, D.L.² McHugh, J.P.³ Clarke, R.C.⁴ Sriram, S.⁵ Burk, A.A.⁶ Greggi, J.⁷ Brandt, CD.⁸ Hopkins, R.H.⁹ Choyke, W.J.¹⁰

7
- 0027543254
- (1993) IEEE Trans. Electron Devices , vol.40 ED , pp. 325
- Brown, D.M.¹ Downey, E.T.² Ghezzo, M.³ Kretchmer, J.W.⁴ Saia, R.J.⁵ Liu, Y.S.⁶ Edmond, J.A.⁷ Gati, G.⁸ Pimbley, J.M.⁹ Schneider, W.E.¹⁰

8
- 0028445917
- (1994) IEEE Electron Device Lett. , vol.15 , pp. 212
- Xie, W.¹ Cooper, J.A.² Melloch, M.R.³ Palmour, J.W.⁴ Carter, C.H.⁵

9
- 21544472704
- (1994) J. Appl. Phys. , vol.75 , pp. 604
- Ouisse, T.¹ Becourt, N.² Jaussaud, C.³ Templier, F.⁴

10
- 0005243925
- (1994) J. Appl. Phys. , vol.75 , pp. 7949
- Neudeck, P.¹ Kang, S.² Petit, J.³ Tabib-Azar, M.⁴

11
- 84936524625
- O.J. Marsh, Silicon Carbide 1973, eds. R.C. Marshall, J.W. Faust, Jr. and CE. Ryan, (University of South Carolina Press, 1974), p. 471.

12
- 84936489300
- (1987) J. Mat. Res. , vol.2 , pp. 107
- Bohn, H.G.¹ Willia, J.M.² McHargue, C.J.³ Begun, G.M.⁴

13
- 0000930318
- (1988) J. Appl. Phys. , vol.63 , pp. 922
- Edmond, J.A.¹ Das, K.² Davis, R.F.³

14
- 0024718471
- (1989) Jpn. J. Appl. Phys. , vol.28 , pp. 1341
- Shibahara, K.¹ Takeuchi, T.² Nishino, S.³ Matsunami, H.⁴

15
- 5244317597
- (1987) Mat. Res. Soc. Symp. Proc. , vol.97 , pp. 195
- Pensl, G.¹ Helbig, R.² Zhang, H.³ Ziegler, G.⁴ Lanig, P.⁵

16
- 0026966807
- (1992) IEEE Electron Device Lett. , vol.12 , pp. 639
- Ghezzo, M.¹ Brown, D.M.² Downey, E.³ Kretchmer, J.⁴ Hennessy, W.⁵ Polla, D.L.⁶ Bakhru, H.⁷

17
- 84936524626
- S. Yaguchi, N. Ohyama, S. Kobayashi, T. Kimoto and H. Matsunami, to be submitted.

18
- 0040146861
- (1966) Solid State Electron. , vol.9 , pp. 1129
- Kroko, L.T.¹ Milnes, A.G.²

19
- 36049060168
- (1968) Phys. Rev. , vol.170 , pp. 698
- Feldman, D.W.¹ Parker, J.H.² Choyke, W.J.³ Patrick, L.⁴

20
- 0016072963
- (1974) Phys. Status Solidi , vol.23 , pp. 383
- Morhange, J.F.¹ Beserman, R.² Balkanski, M.³

21
- 0024664729
- (1989) IEEE J. Quantum Electron. , vol.25 , pp. 965
- Nakashima, S.¹ Hangyo, M.²

22
- 84936524631
- H. Ryssel and I. Ruge, Ion Implantation, (John Wiley & Sons, 1986).

23
- 84936524632
- Yu.A. Vodakov and E.N. Mokhov, Silicon Carbide 1973, eds. R.C. Marshall, J.W. Faust, Jr. and C.E. Ryan, (University of South Carolina Press, 1974), p. 508.

24
- 36449000659
- (1992) J. Appl. Phys. , vol.72 , pp. 3708
- Suttrop, W.¹ Pensl, G.² Choyke, W.J.³ Stein, R.⁴ Leibenzeder, S.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.