A New Method To Determine MOSFET Channel Length

IEEE Electron Device Letters

Volumn 1, Issue 9, 1980, Pages 170-173

  Chern, John G J ^a   Chang, Peter ^a   Motta, Richard F ^a   Godinho, Norm ^a  

^a Zilog Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

TRANSISTORS, FIELD EFFECT;

EID: 0019060104     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1980.25276     Document Type: Article

References (8)

1. H. S. Lee, “An Analysis of the Threshold Voltage for Short Channel IGFET's”, Solid-State Electron., vol. 16, p. 1407, Dec. 1973.
2. R. F. Motta, P., Chang, J. Chern, N. Godinho, “Computer-Aided Device Optimization for MOS/VSLI”, to be published in IEEE, Trans. Electron Devices and J. Solid State Circuits, joint special issue on VLSI, Aug. 1980.
3. R. H. Dennard, F. H. Gaensslen, H.N. Yu, V.L. Rideout, E. Bassous, and A.R. LeBlanc, “Design of Ion-Implanted MOSFET's with Very Small Physical Dimensions”, IEEE, J. Solid-State Circuits, p. 256, October 1974.
4. E. Pan and F.F. Fang, “Lateral Spread of Ion-Implanted Impurities in Silicon”, J. Appl. Phys., p. 2801, June 1974.
5. P. P. Wang, “Device Characteristics of Short-Channel and Narrow-Width MOSFET's”, IEEE Trans. Electron Devices, p. 779, July 1978.
6. J. J. Barnes, K. Shimohigashi, and R.W. Dutton, “Short Channel MOSFET's in the Punchthrough Current Mode”, IEEE, Trans. Electron Devices, p. 446, April 1979.
7. D. L. Critchlow, R. H. Dennard, and S.E. Schuster, “Design and Characteristics of N-Channel Insulated Field Effect Transistors”, IBM J. Res. & Dev., vol. 17, p. 430, Sept. 1973.
8. K. Terada and H. Muta, “A New Method to Determine Effective MOSFET Channel Length”, Japan J. Appl. Phys., p. 953, May 1979.