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84936903550
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Cree Research. Inc. 2810
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Durham, NC
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Cree Research. Inc., 2810 Meridian Parkway, Suite 176, Durham, NC 27713.
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Suite 176
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Meridian, P.1
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84936903551
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SiC electronics for high temperature control systems
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Orlando, FL
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D. M. Brown, M. Ghezzo, J. Kretchmer, E. Downey, T. Gorezyca R. Saia, J. Edmond, J. Palmour, C. H. Carter, Jr. G. Gati, S. Dasgupta J. Pimbley, and P. Chow, “SiC electronics for high temperature control systems,” GOMAC-9], Orlando, FL, Nov. 4–7, 1991.
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Carter, Jr. G. Gati, S. Dasgupta J. Pimbley, and P. Chow
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Brown, D.M.1
Ghezzo, M.2
Kretchmer, J.3
Downey, E.4
Gorezyca, T.5
Saia, R.6
Edmond, J.7
Palmour, J.8
Carter, C.H.9
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3
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84888799843
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High- 6H-SiC rectifiers: prospects and progress
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Santa Barbara, CA.
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P. G. Neudeck, D. J. Larkin, J. A. Powell, and L. G. Matus, “High- 6H-SiC rectifiers: prospects and progress,” IEEE Device Research Conf, Santa Barbara, CA. June 21–23, 1993.
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IEEE Device Research Conf
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Neudeck, P.G.1
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4
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Comparison of 6H-SiC, 3C-SiC, and Si for power devices
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M. Bhatnagar and B. J. Baliga, “Comparison of 6H-SiC, 3C-SiC, and Si for power devices,” /EEE Trans. on Electron Devices, vol. 40 p. 654, 1993.
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Bhatnagar, M.1
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84936903552
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Silicon carbide CCD UV imagers for the 100–300 nm regime
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Washington, DC
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J. A. Cooper, Jr. and M. R. Melloch, “Silicon carbide CCD UV imagers for the 100–300 nm regime,” in Int'l. Con! on Silicon Carbide and Related Materials, Washington, DC, Nov. 1–3, 1993.
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Int'l. Con! on Silicon Carbide and Related Materials
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Cooper, J.A.1
Melloch, M.R.2
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6
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0028445917
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A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications
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W. Xie, J. A. Cooper, Jr., M. R. Melloch, J. W. Palmour, and C. H. Carter, Jr., “A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications,” IEEE Electron Device Lett., vol. 15, June, 1994.
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IEEE Electron Device Lett.
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Xie, W.1
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Palmour, J.W.4
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7
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84936484541
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MOS characterization of thermally oxidized 6H silicon carbide
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Santa Barbara, CA
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J. W. Sanders, J. Pan, W. Xie, S. T. Sheppard, M. Mathur, J. A. Cooper, Jr., and M. R. Melloch, “MOS characterization of thermally oxidized 6H silicon carbide,” in IEEE Device Research Conf., Santa Barbara, CA, June 21–23, 1993.
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IEEE Device Research Conf.
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Sanders, J.W.1
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Sheppard, S.T.4
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Melloch, M.R.7
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8
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21544472704
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Low-frequency, high-temperature conductance and capacitance measurements on metal-carbide capacitors
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T. Ouisse, N. Becourt, C. Jassaud, and F. Templier, “Low-frequency, high-temperature conductance and capacitance measurements on metal- carbide capacitors,” J. Appl. Phys., vol. 75, p. 604, 1994.
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Ouisse, T.1
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9
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21544441547
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Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in S-SiC thin films
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W. Palmour, H. S. Kong. and R. F. Davis, “Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in S-SiC thin films,” J. Appl. Phys., vol. 64, p. 2168, 1988.
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Palmour, I.W.1
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High temperature silicon carbide MOSFET's with very low drain leakage current
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T. Billon, T. Ouisse, P. Lassagne, C. Jassaud, J. L. Ponthenier, L. Baud, N. Becourt, and P. Morfouli, “High temperature silicon carbide MOSFET's with very low drain leakage current,” Electron. Lett., vol 30, p. 170, 1994.
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11
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0028465018
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Characteristics of inversion-channel and buried-channel MOS devices in 6H-SIC
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S. T. Sheppard, M. R. Melloch, and J. A. Cooper, Jr., “Characteristics of inversion-channel and buried-channel MOS devices in 6H-SIC IEEE Trans. on Electron Devices, vol. 41. July, 1994.
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IEEE Trans. on Electron Devices
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Sheppard, S.T.1
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12
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0027837902
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6H- carbide power devices for aerospace applications
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Atlanta, GA
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J. W. Palmour, J. A. Edmond, H. S. Kong, and C. H. Carter, Jr., “6H- carbide power devices for aerospace applications,” in Proc. 28th Intersociety Energy Conversion Engineering Conf., Atlanta, GA, Aug. 1993.
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Proc. 28th Intersociety Energy Conversion Engineering Conf.
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Palmour, J.W.1
Edmond, J.A.2
Kong, H.S.3
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13
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84936895654
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NMOS digital integrated circuits in 6H silicon carbide
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San Francisco, CA
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J. A. Cooper, Jr. and M. R. Melloch, “NMOS digital integrated circuits in 6H silicon carbide,” in WOCSEMMAD Coni, San Francisco, CA, Feb. 21-23 1994.
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WOCSEMMAD Coni.
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Cooper, J.A.1
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14
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4243883636
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High temperature silicon carbide planar IC technology and first monolithic SiC operational amplifier IC
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Charlotte, NC
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D. M. Brown, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, G. Michon, and G. Gati, “High temperature silicon carbide planar IC technology and first monolithic SiC operational amplifier IC,” in Trans. 2nd High Temperature Electronics Conf., vol. 1, D. B. King and F. V. Thome, Eds., Charlotte, NC, June 5–10, 1994.
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Trans. 2nd High Temperature Electronics Conf.
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Brown, D.M.1
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15
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85051941809
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NMOS digital integrated circuits in 6H silicon carbide
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W. Xie, J. A. Cooper, Jr., and M. R. Melloch, ‘”NMOS digital integrated circuits in 6H silicon carbide,” in IEEE Device Research Conf., Boulder, CO, June 20–22, 1994.
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IEEE Device Research Conf., Boulder, CO, June
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Xie, W.1
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16
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0026966807
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Nitrogen-implanted SiC diodes using high-temperature implantation
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M. Ghezzo, D. M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D. L. Polla, and H. Bakhru, “Nitrogen-implanted SiC diodes using high-temperature implantation,” IEEE Electron Device Lett., vol. 13, p. 639, 1992.
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Bakhru, H.7
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17
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0342949010
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Planar depletion mode 6H-SiC MOSFET
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Washington, DC
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V. Krishnamurthy, D. M. Brown, M. Ghezzo, J. Kretchmer, W. Hen-nessy, E. Downey, and G. Michon, “Planar depletion mode 6H-SiC MOSFET’ in Int'l. Con! on Silicon Carbide and Related Materials, Washington, DC, Nov. 1–3, 1993.
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Int'l. Con! on Silicon Carbide and Related Materials
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