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Volumn 15, Issue 11, 1994, Pages 455-457

Monolithic NMOS Digital Integrated Circuits in 6H-SiC

Author keywords

[No Author keywords available]

Indexed keywords

ADDERS; DIGITAL INTEGRATED CIRCUITS; ELECTRIC NETWORK ANALYSIS; FLIP FLOP CIRCUITS; ION IMPLANTATION; LOGIC GATES; MOS DEVICES; MOSFET DEVICES; NAND CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

EID: 0028539636     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.334665     Document Type: Article
Times cited : (79)

References (17)
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    • Cree Research. Inc. 2810
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  • 4
    • 0027558366 scopus 로고
    • Comparison of 6H-SiC, 3C-SiC, and Si for power devices
    • M. Bhatnagar and B. J. Baliga, “Comparison of 6H-SiC, 3C-SiC, and Si for power devices,” /EEE Trans. on Electron Devices, vol. 40 p. 654, 1993.
    • (1993) /EEE Trans. on Electron Devices , vol.40 , pp. 654
    • Bhatnagar, M.1    Baliga, B.J.2
  • 6
    • 0028445917 scopus 로고
    • A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications
    • W. Xie, J. A. Cooper, Jr., M. R. Melloch, J. W. Palmour, and C. H. Carter, Jr., “A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications,” IEEE Electron Device Lett., vol. 15, June, 1994.
    • (1994) IEEE Electron Device Lett. , vol.15
    • Xie, W.1    Cooper, J.A.2    Melloch, M.R.3    Palmour, J.W.4    Carter, C.H.5
  • 8
    • 21544472704 scopus 로고
    • Low-frequency, high-temperature conductance and capacitance measurements on metal-carbide capacitors
    • T. Ouisse, N. Becourt, C. Jassaud, and F. Templier, “Low-frequency, high-temperature conductance and capacitance measurements on metal- carbide capacitors,” J. Appl. Phys., vol. 75, p. 604, 1994.
    • (1994) J. Appl. Phys. , vol.75 , pp. 604
    • Ouisse, T.1    Becourt, N.2    Jassaud, C.3    Templier, F.4
  • 9
    • 21544441547 scopus 로고
    • Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in S-SiC thin films
    • W. Palmour, H. S. Kong. and R. F. Davis, “Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in S-SiC thin films,” J. Appl. Phys., vol. 64, p. 2168, 1988.
    • (1988) J. Appl. Phys. , vol.64 , pp. 2168
    • Palmour, I.W.1    Kong, H.S.2    Davis, H.S.3
  • 11
    • 0028465018 scopus 로고
    • Characteristics of inversion-channel and buried-channel MOS devices in 6H-SIC
    • S. T. Sheppard, M. R. Melloch, and J. A. Cooper, Jr., “Characteristics of inversion-channel and buried-channel MOS devices in 6H-SIC IEEE Trans. on Electron Devices, vol. 41. July, 1994.
    • (1994) IEEE Trans. on Electron Devices , vol.41
    • Sheppard, S.T.1    Melloch, M.R.2    Cooper, J.A.3
  • 13
    • 84936895654 scopus 로고
    • NMOS digital integrated circuits in 6H silicon carbide
    • San Francisco, CA
    • J. A. Cooper, Jr. and M. R. Melloch, “NMOS digital integrated circuits in 6H silicon carbide,” in WOCSEMMAD Coni, San Francisco, CA, Feb. 21-23 1994.
    • (1994) WOCSEMMAD Coni. , pp. 21-23
    • Cooper, J.A.1    Melloch, M.R.2
  • 14
    • 4243883636 scopus 로고
    • High temperature silicon carbide planar IC technology and first monolithic SiC operational amplifier IC
    • Charlotte, NC
    • D. M. Brown, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, G. Michon, and G. Gati, “High temperature silicon carbide planar IC technology and first monolithic SiC operational amplifier IC,” in Trans. 2nd High Temperature Electronics Conf., vol. 1, D. B. King and F. V. Thome, Eds., Charlotte, NC, June 5–10, 1994.
    • (1994) Trans. 2nd High Temperature Electronics Conf.
    • Brown, D.M.1    Ghezzo, M.2    Kretchmer, J.3    Krishnamurthy, V.4    Michon, G.5    Gati, G.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.