193-nm single-layer photoresists based on alternating copolymers of cycloolefins: The use of photogenerators of sulfamic acids

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 73-82

  Houlihan, Francis M ^a   Kometani, Janet M ^a   Timko, Allen G ^a   Hutton, Richard S ^a   Cirelli, Raymond A ^a   Reichmanis, Elsa ^a   Nalamasu, Omkaram ^a   Gabor, Allen H ^b   Medina, Arturo N ^b   Biafore, John J ^b   Slater, Sydney G ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b Olin Microelectronic Materials   (United States)

Author keywords

193 nm; Cycloolefins; Deep UV; Norbornene; PEB delay; Photoacid generators; Photodecomposable base

Indexed keywords

ACIDS; ACTIVATION ENERGY; ADDITIVES; COPOLYMERIZATION; COPOLYMERS; DISSOLUTION; MALEIC ANHYDRIDE; PHOTORESISTORS; PHOTORESISTS; POLYMERS; RESINS;

193 NM; CYCLOOLEFINS; DEEP-UV; NORBORNENE; PEB DELAY; PHOTOACID GENERATORS; PHOTODECOMPOSABLE BASE;

SULFAMIC ACID;

EID: 60849085199     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312462     Document Type: Conference Paper

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