Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 60, Issue 2, 1999, Pages 95-100

  Hahn, Y B ^a   Hays, D C ^b   Cho, H ^a   Jung, K B ^a   Abernathy, C R ^a   Donovan, S M ^a   Pearton, S J ^a   Han, J ^b   Shul, R J ^b  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; IODINE COMPOUNDS; ION BOMBARDMENT; PLASMA ETCHING; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPUTTER DEPOSITION; SURFACE ROUGHNESS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; INDIUM NITRIDE; INDUCTIVELY COUPLED PLASMAS (ICP); IODINE BROMIDE; IODINE CHLORIDE; PLASMA DISCHARGES;

SEMICONDUCTOR MATERIALS;

EID: 0032687184     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00036-7     Document Type: Article

References (31)

1. Shul R.J., McClellan G.B., Casalnuova S.A., Rieger D.J., Pearton S.J., Constantine C., Barrat C., Karlicek R.F. Jr., Tran C., Schurman M. Appl. Phys. Lett. 69:1996;1119.
2. Shul R.J. Pearton S.J. GaN and Related Materials. 1997;Gordon and Breach, N.Y.
3. Gillis H.P., Choutov D.A., Martin K.P. J. Mater. 48:1996;50.
4. Adesida I., Mahajan A., Andideh E., Khan M.A., Olsen D.T., Kuznia J.N. Appl. Phys. Lett. 63:1993;2777.
5. Lin M.E., Fan Z.F., Ma Z., Allen L.H., Morkoc H. Appl. Phys. Lett. 64:1994;887.
6. Lee H., Oberman D.B., Harris J.S. Jr. Appl. Phys. Lett. 67:1995;1754.
7. Pletschen W., Niegurch R., Bachem K.H. Proc. Symp. Wide bandgap semiconductors and devices. 95-21:1995;241 Electorchemcal Society, Pennington, N.J.
8. Pearton S.J., Abernathy C.R., Ren F. Appl. Phys. Lett. 64:1994;2294.
9. Zhang L., Ramer J., Brown J., Zhang K., Lester L.F., Hersee S.D. Appl. Phys. Lett. 68:1996;367.
10. Shul R.J., Briggs R.D., Pearton S.J., Vartuli C.B., Abernathy C.R., Lee J.W., Constantine C., Barratt C. Mat. Res. Soc. Symp. Proc. 449:1997;969.
11. Cho H., Vartuli C.B., Donovan S.M., Abernathy C.R., Pearton S.J., Shul R.J., Constantine C. J. Vac. Sci. Technol. A. 16:1998;1631.
12. Cho H., Vartuli C.B., Donovan S.M., Mackenzie K.D., Abernathy C.R., Pearton S.J., Shul R.J., Constantine C. J. Electron. Mater. 27:1998;166.
13. Nakamura S. Pearton S.J. GaN and Related Materials. 1997;Gordon and Breach, N.Yy.
14. Aktas O., Fan Z., Mohammad S.N., Botcharev A., Morkoc H. Appl. Phys. Lett. 69:1996;25.
15. Khan M.A., Kuznia J.N., Shur M.S., Eppens C., Burm J., Schaff W. Appl. Phys. Lett. 66:1995;1083.
16. Wu Y.F., Keller B.P., Keller S., Kapolnek D., Den Baars S.D., Mishra U.K. IEEE Electron. Dev. Lett. 17:1996;455.
17. Khan M.A., Chen Q., Shur M.S., McDermott B.T., Higgins J.A., Burm J., Schaff W., Eastman L.F. Electron. Lett. 32:1996;357.
18. Wu Y.T., Keller S., Kozodoy P., Keller B.P., Parikh P., Kapolnek D., Denbaars S.P., Mishra U.K. IEEE Electron. Dev. Lett. 18:1997;290.
19. Vartuli C.B., Pearton S.J., Lee J.W., Mackenzie J.D., Abernathy C.R., Shul R.J. J. Vac. Sci. Technol. B. 15:1997;98.
20. Lee J.W., Hong J., Lambers E.S., Pearton S.J. J. Vac. Sci. Technol. B. 15:1997;652.
21. Abernathy C.R. J. Vac. Sci. Technol. A. 11:1993;869.
22. Abernathy C.R. Mater. Sci. Eng. Rep. R14:1995;203.
23. Y. B. Hahn and S. J. Pearton (to be published).
24. Lieberman M.A., Lichtenberg A.J. Principles of plasma discharges and materials processing. 1994;John Wiley & Sons Inc, N.Y.
25. Lee J.W., Hong J., Pearton S.J. Appl. Phys. Lett. 68:1996;847.
26. Hahn Y.B., Hays D.C., Donovan S.M., Abernathy C.R., Han J., Shul R.J., Cho H., Jung K.B., Pearton S.J. J. Vac. Sci. Technol. A. 14:1999;2601.
27. th:1989;CRC Press Inc, Boca Raton, FL.
28. Burm J., Chu K., Schaff W.J., Eastman L.F., Khan M.A., Chen Q., Yang J.W., Shur M.S. IEEE Electron. Dev. Lett. 18:1997;141.
29. Donovan S.M., MacKenzie K.D., Abernathy C.R., Pearton S.J., Ren F., Jones K., Cole M. Appl. Phys. Lett. 70:1997;2592.
30. Ren F., Abernathy C.R., Pearton S.J., Wisk P.W. Appl. Phys. Lett. 64:1994;1508.
31. Ren F., Shul R.J., Abernathy C.R., Chu S.N.G., Lothian J.R., Pearton S.J. Appl. Phys. Lett. 66:1995;1503.