The dry etching of group III-nitride wide-bandgap semiconductors

JOM

Volumn 48, Issue 8, 1996, Pages 50-55

  Gillis, H P ^a,b   Choutov, D A ^c,d   Martin, K P ^d,e  

^a UNIVERSITY OF CHICAGO   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Institute of Applied Physics

^d Georgnia Institute of Technology

^e OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; ION BOMBARDMENT; LITHOGRAPHY; MICROWAVES; NITRIDES; OPTOELECTRONIC DEVICES; RADIATION EFFECTS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; SURFACES;

CHEMICALLY ASSISTED ION BEAM ETCHING; LOW ENERGY ELECTRON ENHANCED ETCHING;

SEMICONDUCTOR MATERIALS;

EID: 0030217052     PISSN: 10474838     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03223028     Document Type: Review

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