Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 1007-1015

  Niu, Guofu ^a   Cressler, John D ^a   Zhang, Shiming ^a   Gogineni, Usha ^a   Ahlgren, David C ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; IMPACT IONIZATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

AVALANCHE MULTIPLICATION EFFECTS; DEAD SPACE EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032665016     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760410     Document Type: Article

References (21)

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