Quantifying neutral base recombination and the effects of collector-base junction traps in UHV/CVD SiGe HBT's

IEEE Transactions on Electron Devices

Volumn 45, Issue 12, 1998, Pages 2499-2504

  Niu, Guofu ^a   Cressler, J D ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

Device simulation; Neutral base recombination; Sige HBT; Traps

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; TWO DIMENSIONAL;

NEUTRAL BASE RECOMBINATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032309645     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.735727     Document Type: Article

References (7)

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