A 2-D numerical simulation methodology for noise figure optimization in UHV/CVD SiGe HBT's

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998

Volumn 1998-September, Issue , 1998, Pages 33-37

  Niu, G ^a   Ansley, W E ^b   Zhang, Shiming ^a   Cressler, J D ^a   Groves, R ^b  

^a AUBURN UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC INTEGRATED CIRCUITS; NOISE FIGURE; NUMERICAL MODELS;

2-D NUMERICAL SIMULATION; COLLECTOR DOPING; NOISE MODELS; OPERATING CURRENTS; SIGE HBTS; UHV/CVD; Y-PARAMETERS;

SI-GE ALLOYS;

EID: 84966643131     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.1998.750172     Document Type: Conference Paper

References (7)

1. F. Herzel and B. Heinemann, "High frequency noise of bipolar devices in consideration of carrier heating and low temperature effects," Solid-state Electronics, vol. 38, pp. 1905-1909, November 1995.
2. S.P. Voinigescu, M.C. Maliepaard, J.L. Showell, G.E. Babcock, D. Marchesan, M. Schroter, P. Schvan, and D.L. Harame," A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design," IEEE Journal of Solid-state Circuits, vol. 32, pp. 1430-1438, September 1997.
3. MEDICI, 2-D Semiconductor Device Simulator, version 4.0, Technology Modeling Associates, 1997.
4. D.L. Harame, J.H. Comfort, J.D. Cressler, E.F. CrabbC, J.Y.C. Sun, B.S. Meyerson, T. Tice, 'Si/SIGeepitaxial-base transistors-Part I: Materials, physics, and circuits," ZEEE Trans. Electron Devices, vol. 42, pp. 469-482, March 1995.
5. D.C. Ahlgren, G. Freeman, S. Subbanna, R. Groves, D. Greenberg, J. Malinowski, D. Nguyen-Ngoc, S.J. Jeng, K. Stein, K. Schonenberg, D. Kiesling, B. Martin, S. Wu, D.L. Harame, and B. Meyerson, "A SiGe HBT BiCMOS technology for mixed signal RF applications," Proc. IEEE BCTM, pp. 195-198, September 1997.
6. U. Zillmann and F. Herzel, "An improved SPICE model for high frequency noise of BJT's and HBT's," IEEE Journal ofSolid-State Circuits, vol. 3 1, pp. 1344-1 346, September 1996.
7. F. Herzel, P. Schley, B. Heinemann, U. Zilmann, D. Knoll, D. Temmler, and U. Erben, "Experimental verification and numerical application of the thermodynamic approach to high frequency noise in SiGe HBT's," Solid-State Electronics, vol. 41, pp. 387-390, March 1997.