Breakdown Voltage Improvement in Strained InGaAlAs/GaAs FET's

IEEE Electron Device Letters

Volumn 13, Issue 8, 1992, Pages 421-423

  Eisenbeiser, K W ^a   East, Jack R ^a   Singh, Jasprit ^a   Li, W ^a   Haddad, G I ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

BREAKDOWN VOLTAGES; STRAINED FET;

TRANSISTORS, FIELD EFFECT;

EID: 0026910743     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192778     Document Type: Article

References (7)

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3. H. Hida, A. Oklllamoto, H. Toyoshima, and K. Ohata, “A high-current drivability i-AlGaAs/n-GaAs doped-channel MIS-like FET (DMT),” IEEE Electron Device Lett., vol. EDL-7, no. 11, p. 625, 1986.
4. L. W. Yin et al., “Improved breakdown voltage in GaAs MESFET's utilizing surface layers of GaAs grown at a low temperature by MBE,” IEEE Electron Device Lett., vol. 11, no. 12, p. 561, 1990.
5. J. Singh, “A theoretical study of electron impact ionisation in pseudomorphic InGaAlAs on GaAs and InP substrates,” presented at the 1991 Int. Symp. Gallium Arsenide and Related Compounds, Sept. 23–26, 1991.
6. J. P. R. David, J. E. Sitch, and M. S. Stern, “Gate–drain avalanche breakdown in GaAs power MESFET's,” IEEE Trans. Electron Devices, vol. ED-29, no. 10, p. 1548, 1982.
7. P. Zwicknagl et al., “Very low resistance Au/Ge/Ni/Ag based ohmic contact formation to Al0.25/Ga0.75/As/GaAs and Al0.48 In0.52As/ Ga0.47In0.53As heterostructures: A behavioral comparison,” J. Vac. Sci. Technol. vol. B4, no. 2, p. 476, Mar./Apr. 1986.