Measurement of the Electron Ionization Coefficient at Low Electric Fields in GaAs-Based Heterojunction Bipolar Transistors

IEEE Electron Device Letters

Volumn 15, Issue 9, 1994, Pages 354-356

  Canali, C ^a   Capasso, F ^b   Malik, R ^b   Neviani, A ^c   Pavan, P ^c   Tedesco, C ^c   Zanoni, E ^c  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b LUCENT TECHNOLOGIES   (United States)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HETEROJUNCTIONS; IONIZATION; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS;

EARLY EFFECT; ELECTRON IONIZATION COEFFICIENT MEASUREMENT; GALLIUM ARSENIDE BASED HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH BASE DOPING; IMPACT IONIZATION MULTIPLICATION FACTORS;

BIPOLAR TRANSISTORS;

EID: 0028498191     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.311132     Document Type: Article

References (14)

1. H.-F. Chau, J. Hu, D. Pavlidis, and K. Tomizawa, “Breakdown-speed considerations in AIGaAs/GaAs heterojunction bipolar transistors with special collector designs,” IEEE Trans. on Electron Dev., vol. 39, no. 12, pp. 2711–2719, 1992.
2. E. F. Crabbé J. M. C. Stork, G. Baccarani, M. V. Fischetti, and S. E. Laux “The impact of nonequilibrium transport on breakdown and transit time in bipolar transistors,” in IEDM Tech. Dig., 1990, pp. 463–466.
3. G. Verzellesi, P. Pavan, E. Zanoni, C. Canali, “Impact Ionization effects in Si bipolar transistors,” in Process and Device Modelling for Microelectronics, G. Baccarani, ed. New York: Elsevier Science Pub., 1993.
4. K. Horio, Y. Iwatsu, and H. Yanai, “Numerical simulation of AI- GaAs/GaAs heterojunction bipolar transistors with various collector parameters,” IEEE Trans. Electron Devices, vol. 36, no. 4, pp. 617–624, 1989.
5. J. J. Chen, G-B. Gao, J -I. Chyi and H. Morkoç“Breakdown behavior of GaAs/AIGaAs HBT's,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2165–2172, 1989.
6. E. Zanoni, R. Malik, P. Pavan, J. Nagle, A. Paccagnella, and C. Canali, “Negative base current and impact ionization phenomena in AIGaAslGaAs HBT's,” IEEE Electron Device Lett., vol. 13, no. 5, pp. 253–255, 1992.
7. J. W. Slotboom, G. Streuther, G. J. Davis and P. B. Hartog, “Surface impact ionization in silicon devices,” in IEDM Tech. Dig., 1987, pp. 494–497.
8. W. Maes, K. De Meyer, and R. Van Overstaeten, “Impact ionization in silicon: a review and update,” Solid-State Electronics, vol. 33, no. 6, pp. 705–718, 1990.
9. D. Ritter, R. A. Hamm, A. Feygenson, and M. B. Panish, “Anomalous electric field and temperature dependence of collector multiplication in InP/Ga 0.4 7 In 0. 53 As heterojunction bipolar transistors,” Appl. Phys. Lett., vol. 60, no. 25, pp. 3150–3152, 1992.
10. F. Capasso, in Semiconductors and Semimetals, W. T. Tsang, Ed. Orlando: Academic, 1985, vol. 22D.
11. G. E. Bulman, V. M. Robbins, and G. E. Stillman, “The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent measurements,” IEEE Trans. Electron Devices, vol. 32, no. 11, pp. 2454–2466, 1985.
12. S. M. Sze, Physics of Semiconductor Devices. New York: J. Wiley & Sons, 1981.
13. J. J. Liou, “Calculation of the base current components and determination of their relative importance in AlGaAsJGaAs and InAIAs/InGaAs heterojunction bipolar transistors,” J. Appl. Phys., vol. 69, no. 5, pp. 3328–3334, 1991.
14. I. Takayanagi, K. Matsumoto, and J. Nakamura, “Measurements of electron impact ionization coefficient in bulk silicon under a low electric field,” J. Appl. Phys., vol. 72, no. 5, pp. 1989–1992, 1992.