Collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's

IEEE Electron Device Letters

Volumn 19, Issue 8, 1998, Pages 288-290

  Niu, Guofu ^a,b   Cressler, John D ^a,b   Gogineni, Usha ^a,b   Harame, David L ^a,c  

^a IEEE   (United States)

^b AUBURN UNIVERSITY   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Avalanche multiplication; Bipolar technology; Impact ionization; SiGe HBT

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; ELECTRIC HEATING; ENERGY GAP; IONIZATION OF SOLIDS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

COLLECTOR BASE JUNCTION AVALANCHE MULTIPLICATION EFFECTS; IMPACT IONIZATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032141526     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.704402     Document Type: Article

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