Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 940-946

  Ha, Daewon ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS;

HIGH DENSITY PLASMA (HDP); SHALLOW TRENCH ISOLATION (STI);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0032630287     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760401     Document Type: Article

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