Stress-induced dislocations in silicon integrated circuits

IBM Journal of Research and Development

Volumn 36, Issue 2, 1992, Pages 158-182

  Fahey, P M ^a   Mader, S R ^a   Stiffler, S R ^a   Mohler, R L ^a   Mis, J D ^a   Slinkman, J A ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; MOS DEVICES; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON; STRESSES; SUBSTRATES;

DRAM CELLS; MOS-BASED IC; OXIDATION-INDUCED STRESS; SHALLOW-TRENCH ISOLATION; SILICON IC; STRESS-INDUCED DISLOCATIONS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0026836910     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.362.0158     Document Type: Article

References (75)