Location Effects of Extended Defects on Electrical Properties of p+-n Junction

Journal of the Electrochemical Society

Volumn 136, Issue 3, 1989, Pages 768-772

  Wood, W ^c  

^a Wacker Siltronic   (United States)

^b Incorporated ^*  (United States)

^c OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI; SEMICONDUCTOR DIODES--ION IMPLANTATION; SOLID STATE DEVICES--ELECTRIC PROPERTIES;

DISLOCATION LOOPS; SILICON WAFERS; STACKING FAULTS;

SEMICONDUCTOR DEVICES;

EID: 0024619830     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2096739     Document Type: Article

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