The potential of SiC and GaN for application in high speed devices

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1512-1514

  Schwierz, F ^a   Kittler, M ^a   Forster H ^a   Schipanski, D ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Device modeling; High speed devices; MESFET; Wide band gap semiconductors

Indexed keywords

EID: 0041727036     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00050-2     Document Type: Article

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