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Journal of Crystal Growth

Volumn 163, Issue 1-2, 1996, Pages 54-59

Atomic scale studies of epitaxial growth processes using X-ray techniques

(5) Kisker, D W a Stephenson, G B a Tersoff, J a Fuoss, P H b Brennan, S c

a IBM T J WATSON RESEARCH CENTER (United States)

b LUCENT TECHNOLOGIES (United States)

c SLAC NATIONAL ACCELERATOR LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; DEPOSITION; FLUXES; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

ADATOMS; ATOMIC STUDY; CRYSTAL TRUNCATION ROD; DIFFUSE SCATTERING; LAYER BY LAYER GROWTH; NUCLEATION THEORY; STEP FLOW GROWTH; X RAY SCATTERING;

EPITAXIAL GROWTH;

EID: 0030563497 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)01049-1 Document Type: Article

Times cited : (28)

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