Step-flow Metallorganic Vapor Phase Epitaxy of GaN on SiC substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 4 B, 1998, Pages

  Nishida, Toshio ^a   Akasaka, Tetsuya ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; SAPPHIRE; SILICON CARBIDE; SUBSTRATES;

DOUBLE STACKED MONOLAYERS (DSM); GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032049687     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l459     Document Type: Article

References (7)