High-quality GaN and AIN grown by gas-source molecular beam epitaxy using ammonia as the nitrogen source

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2354-2356

  Yang, Z ^a   Li, L K ^a   Wang, W I ^a  

^a Department of Earth and Environmental Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001478267     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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