Long-wavelength Semiconductor Lasers on InGaAs Ternary Substrates with Excellent Temperature Characteristics

Fujitsu Scientific and Technical Journal

Volumn 34, Issue 2, 1998, Pages 212-222

  Otsubo, Koji ^a   Nishijima, Yoshito ^a   Ishikawa, Hiroshi ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TEMPERATURE;

MULTICOMPONENT ZONE GROWTH METHOD; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0032292650     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)

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