Calculated performances of 1.3-μm vertical-cavity surface-emitting lasers on InGaAs ternary substrates

IEEE Journal of Quantum Electronics

Volumn 33, Issue 2, 1997, Pages 238-245

  Shoji, Hajime ^b,c,d,e   Otsubo, Koji ^b,d,e,f   Fujii, Takuya ^b,e,g,h   Ishikawa, Hiroshi ^a,b,e,i  

^a IEEE

^b FUJITSU LABORATORIES LTD   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d Optoelectronics Fujitsu Laboratory   (Hong Kong)

^e JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

^g SHINSHU UNIVERSITY   (Japan)

^h OSAKA UNIVERSITY   (Japan)

ⁱ TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Quantum well lasers; Semiconductor lasers; Simulation; Surface emitting lasers; Ternary substrate

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; CURRENT DENSITY; MIRRORS; PERFORMANCE; QUANTUM WELL LASERS; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

DISTRIBUTED BRAGG REFLECTOR; TERNARY SUBSTRATES; VERTICAL CAVITY SURFACE EMITTING LASERS; WAVELENGTH;

SEMICONDUCTOR LASERS;

EID: 0031075209     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.552264     Document Type: Article

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