1.3μm InAsP/InAIGaAs MQW lasers for high-temperature operation

Electronics Letters

Volumn 33, Issue 12, 1997, Pages 1048-1049

  Anan, T ^a   Yamada, M ^a   Tokutome, K ^a   Sugou, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

ANNEALING; BAND STRUCTURE; CURRENT DENSITY; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CONDUCTION BAND DISCONTINUITY;

QUANTUM WELL LASERS;

EID: 0031554332     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970671     Document Type: Article

References (7)

1. OOHASHI, H., SEKI, S., HIRONO, T., SUGIURA, H., AMANO, T., UEKI, M., NAKANO, J., YAMAMOTO, M., TOHMORI, Y., FUKUDA, M., and YOKOYAMA, K.: 'High-power and high-efficiency 1.3μm InAsP compressively-strained MQW lasers at high temperatures', Electron. Lett., 1995, 31, pp. 556-557
2. 0 and low threshold current density of 1.3 μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers', Electron. Lett., 1995, 31, pp. 803-805
3. OOHASHI, H., HIRONO, T., SEKI, S., SUGIURA, H., NAKANO, J., YAMAMOTO, M., TOHMORI, Y., and YOKOYAMA, K.: '1.3 μm InAsP compressively strained multiple-quantum-well lasers for high-temperature operation', J. Appl. Phys., 1995, 77, pp. 4119-4121
4. 0.33/InP strained single quantum wells', J. Electron. Mater., 1991, 20, pp. 1117-1123
5. 1-x,' Phys. Rev. B, 1996, 53, pp. 1990-1996
6. ANAN, T., NISHI, K., TOKUTOME, K., and SUGOU, S.: 'Conduction band discontinuity of InAsP heterojunction', Jpn. J. Appl. Phys, (to be submitted)
7. YAMADA, N., ROOS, G., and HARRIS, J.S., Jr.: 'Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealing', Appl. Phys. Lett., 1991, 59, pp. 1040-1042