InGaAs bulk crystal growth for high T0 semiconductor lasers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 45-48

  Nishijima, Yoshito ^a   Nakajima, Kazuo ^a   Otsubo, Koji ^a   Ishikawa, Hiroshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; TEMPERATURE;

BRIDGMAN METHOD; LIQUID ENCAPSULATED CZOCHRALSKI METHOD; MULTICOMPONENT ZONE GROWTH METHOD;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0032296412     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)