Growth of uniform InGaAs bulk crystal by multi-component zone melting method

Materials Research Society Symposium - Proceedings

Volumn 417, Issue , 1996, Pages 315-318

  Kusunoki, T ^a   Nakajima, K ^a   Shoji, H ^a   Suzuki, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTALS; CURRENT DENSITY; LATTICE CONSTANTS; MELTING; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; TERNARY SYSTEMS;

LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUE; MINIMUM THRESHOLD CURRENT DENSITY; MULTI COMPONENT ZONE MELTING METHOD;

CRYSTAL GROWTH FROM MELT;

EID: 0029719760     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)